Nexperia

ES3DP

200 V, 3 A hyperfast PN-rectifier

ES3DP

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Product data sheet

3 August 2017

5 / 14

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)R

reverse breakdown

voltage

IR = 100 µA; pulsed; Tj = 25 °C

[1]

200

-

-

V

IF = 3 A; pulsed; Tj = 25 °C

[1]

-

900

980

mV

VF

forward voltage

IF = 3 A; pulsed; Tj = 125 °C

[1]

-

755

840

mV

VR = 200 V; pulsed; Tj = 25 °C

[1]

-

7

200

nA

IR

reverse current

VR = 200 V; pulsed; Tj = 125 °C

[1]

-

2

30

µA

Cd

diode capacitance

VR = 4 V; f = 1 MHz; Tj = 25 °C

-

27

-

pF

reverse recovery time ;

step recovery

IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;

Tj = 25 °C

-

12

25

ns

trr

reverse recovery time ;

ramp recovery

IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;

Tj = 25 °C

-

25

-

ns

VFRM

peak forward recovery

voltage

IF = 1 A; dIF/dt = 50 A/µs; Tj = 25 °C

-

810

-

mV

[1] Very short pulse, in order to maintain a stable junction temperature.

aaa-026983

VF (V)

0

1.2

0.8

0.4

10-2

10-3

1

10-1

10

IF

(A)

10-4

(1)

(3)

(2)

(4)

(5)

pulsed condition

(1) Tj = 150 °C

(2) Tj = 125 °C

(3) Tj = 85 °C

(4) Tj = 25 °C

(5) Tj = -40 °C

Fig. 3. Forward current as a function of forward

voltage; typical values

aaa-026984

IR

(A)

10-9

10-11

10-10

10-6

10-7

10-8

10-5

10-12

VR (V)

0

200

120

160

40

80

(1)

(3)

(2)

(4)

(5)

pulsed condition

(1) Tj = 150 °C

(2) Tj = 125 °C

(3) Tj = 85 °C

(4) Tj = 25 °C

(5) Tj = −40 °C

Fig. 4. Reverse current as a function of reverse

voltage; typical values