2004 Nov 22

3

NXP Semiconductors

Product data sheet

NPN switching transistor

PXT4401

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1.

Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.

2.

Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.

3.

Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

60

V

VCEO

collector-emitter voltage

open base

−

40

V

VEBO

emitter-base voltage

open collector

−

5

V

IC

collector current (DC)

−

600

mA

ICM

peak collector current

−

800

mA

IBM

peak base current

−

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

note 1

−

0.5

W

note 2

−

0.8

W

note 3

−

1.1

W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

ambient temperature

−65

+150

°C

Tamb (°C)

−75

175

125

25

75

−25

006aaa238

800

400

1200

1600

Ptot

(mW)

0

(1)

(2)

(3)

Fig.2 Power derating curves.

(1) FR4 PCB; 6 cm2 mounting pad for collector.

(2) FR4 PCB; 1 cm2 mounting pad for collector.

(3) FR4 PCB; standard footprint.