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2SC2884 Datasheet(PDF) 2 Page - Nanjing International Group Co |
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2SC2884 Datasheet(HTML) 2 Page - Nanjing International Group Co |
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2 / 3 page ![]() NPN Silicon Epitaxial Planar Transistor 2SC2884 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA VCE=1V,IC=100mA 100 320 DC current gain hFE VCE=1V,IC=700mA 35 Collector-emitter saturation voltage VCE(sat) IC=0.5A, IB=0.02A 0.5 V Base-emitter voltage VBE VCE=1V, IC=10mA 0.5 0.8 V Transition frequency fT VCE=5V,Ic=10mA 120 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 13 pF CLASSIFICATION OF hFE Rank O Y Range 100-200 160-320 MARKING PO1 PY1 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.dgnjdz.com www.dgnjdz.com |
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