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STM32H7 Datasheet(PDF) 108 Page - STMicroelectronics

Part # STM32H7
Description  32-bit Arm® Cortex®-M7 480MHz MCUs, up to 2MB flash, up to 1MB RAM, 46 com. and analog interfaces
PDF  357 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H7 Datasheet(HTML) 108 Page - STMicroelectronics

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Electrical characteristics (rev Y)
STM32H742xI/G STM32H743xI/G
108/357
DS12110 Rev 10
6.3.4
Embedded reset and power control block characteristics
The parameters given in Table 27 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 24: General operating
conditions.
Table 27. Reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tRSTTEMPO(1)
Reset temporization
after BOR0 released
-
-
377
-
µs
VBOR0/POR/PDR
Brown-out reset threshold 0
(VPOR/VPDR thresholds)
Rising edge(1)
1.62
1.67
1.71
V
Falling edge
1.58
1.62
1.68
VBOR1
Brown-out reset threshold 1
Rising edge
2.04
2.10
2.15
Falling edge
1.95
2.00
2.06
VBOR2
Brown-out reset threshold 2
Rising edge
2.34
2.41
2.47
Falling edge
2.25
2.31
2.37
VBOR3
Brown-out reset threshold 3
Rising edge
2.63
2.70
2.78
Falling edge
2.54
2.61
2.68
VPVD0
Programmable Voltage
Detector threshold 0
Rising edge
1.90
1.96
2.01
Falling edge
1.81
1.86
1.91
VPVD1
Programmable Voltage
Detector threshold 1
Rising edge
2.05
2.10
2.16
Falling edge
1.96
2.01
2.06
VPVD2
Programmable Voltage
Detector threshold 2
Rising edge
2.19
2.26
2.32
Falling edge
2.10
2.15
2.21
VPVD3
Programmable Voltage
Detector threshold 3
Rising edge
2.35
2.41
2.47
Falling edge
2.25
2.31
2.37
VPVD4
Programmable Voltage
Detector threshold 4
Rising edge
2.49
2.56
2.62
Falling edge
2.39
2.45
2.51
VPVD5
Programmable Voltage
Detector threshold 5
Rising edge
2.64
2.71
2.78
Falling edge
2.55
2.61
2.68
VPVD6
Programmable Voltage
Detector threshold 6
Rising edge
2.78
2.86
2.94
Falling edge in Run mode
2.69
2.76
2.83
Vhyst_BOR_PVD
Hysteresis voltage of BOR
(unless BOR0) and PVD
Hysteresis in Run mode
-
100
-
mV
IDD_BOR_PVD(1)
BOR(2) (unless BOR0) and
PVD consumption from VDD
-
-
-
0.630
µA



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