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STM32H7 Datasheet(PDF) 37 Page - STMicroelectronics

Part # STM32H7
Description  32-bit Arm® Cortex®-M7 480MHz MCUs, up to 2MB flash, up to 1MB RAM, 46 com. and analog interfaces
PDF  357 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H7 Datasheet(HTML) 37 Page - STMicroelectronics

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DS12110 Rev 10
37/357
STM32H742xI/G STM32H743xI/G
Functional overview
54
In addition, an analog watchdog feature can accurately monitor the converted voltage of
one, some or all selected channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1,
TIM2, TIM3, TIM4, TIM6, TIM8, TIM15, HRTIM1 and LPTIM1 timer.
3.18
Temperature sensor
STM32H742xI/G and STM32H743xI/G devices embed a temperature sensor that generates
a voltage (VTS) that varies linearly with the temperature. This temperature sensor is
internally connected to ADC3_IN18. The conversion range is between 1.7 V and 3.6 V. It
can measure the device junction temperature ranging from
− 40 up to +125 °C.
The temperature sensor have a good linearity, but it has to be calibrated to obtain a good
overall accuracy of the temperature measurement. As the temperature sensor offset varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only. To improve the accuracy of
the temperature sensor measurement, each device is individually factory-calibrated by ST.
The temperature sensor factory calibration data are stored by ST in the System memory
area, which is accessible in Read-only mode.
3.19
VBAT operation
The VBAT power domain contains the RTC, the backup registers and the backup SRAM.
To optimize battery duration, this power domain is supplied by VDD when available or by the
voltage applied on VBAT pin (when VDD supply is not present). VBAT power is switched
when the PDR detects that VDD dropped below the PDR level.
The voltage on the VBAT pin could be provided by an external battery, a supercapacitor or
directly by VDD, in which case, the VBAT mode is not functional.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC, the backup registers and the backup SRAM.
Note:
When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
When PDR_ON pin is connected to VSS (Internal Reset OFF), the VBAT functionality is no
more available and VBAT pin should be connected to VDD.



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