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STM32H7 Datasheet(PDF) 137 Page - STMicroelectronics |
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STM32H7 Datasheet(HTML) 137 Page - STMicroelectronics |
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137 / 357 page ![]() DS12110 Rev 10 137/357 STM32H742xI/G STM32H743xI/G Electrical characteristics (rev Y) 320 of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency deviation). The following tables are the compilation of the SIC1/SIC2 and functional ESD results. Negative induced A negative induced leakage current is caused by negative injection and positive induced leakage current by positive injection. 6.3.15 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 60: I/O static characteristics are derived from tests performed under the conditions summarized in Table 24: General operating conditions. All I/Os are CMOS and TTL compliant (except for BOOT0). For information on GPIO configuration, refer to the application note AN4899 “STM32 GPIO configuration for hardware settings and low-power consumption” available from the ST website www.st.com. Table 59. I/O current injection susceptibility(1) Symbol Description Functional susceptibility Unit Negative injection Positive injection IINJ PA7, PC5, PG1, PB14, PJ7, PA11, PA12, PA13, PA14, PA15, PJ12, PB4 50 mA PA2, PH2, PH3, PE8, PA6, PA7, PC4, PE7, PE10, PE11 0 NA PA0, PA_C, PA1, PA1_C, PC2, PC2_C, PC3, PC3_C, PA4, PA5, PH4, PH5, BOOT0 00 All other I/Os 5 NA 1. Guaranteed by characterization . Table 60. I/O static characteristics Symbol Parameter Condition Min Typ Max Unit VIL I/O input low level voltage except BOOT0 1.62 V<VDDIOx<3.6 V - - 0.3VDD(1) V I/O input low level voltage except BOOT0 -- 0.4VDD− 0.1(2) BOOT0 I/O input low level voltage - - 0.19VDD+ 0.1(2) VIH I/O input high level voltage except BOOT0 1.62 V<VDDIOx<3.6 V 0.7VDD(1) -- V I/O input high level voltage except BOOT0(3) 0.47VDD+ 0.25(2) -- BOOT0 I/O input high level voltage(3) 0.17VDD+ 0.6(2) -- |
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