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STD10P6F6 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD10P6F6 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 24 page ![]() DocID022967 Rev 5 3/24 STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 Electrical ratings 24 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit DPAK IPAK TO-220FP TO-220 VDS Drain-source voltage -60 V VGS Gate-source voltage ± 20 V ID (1) 1. Limited by package Drain current (continuous) at TC = 25 °C -10 A ID Drain current (continuous) at TC = 100 °C -7.2 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) -40 A PTOT Total dissipation at TC = 25 °C 35 20 30 W EAS Single pulse avalanche energy (starting TJ=25 °C, ID=-3 A, VDD=40 V) 80 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) 2500 V VDG Drain-gate voltage (VGS = 0) -20 V Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C Table 3. Thermal data Symbol Parameter Value Unit DPAK IPAK TO-220FP TO-220 Rthj-case Thermal resistance junction-case max 4.29 7.5 5 °C/W Rthj-amb Thermal resistance junction-ambient max 100 62.5 62.5 °C/W Rthj-pcb Thermal resistance junction-pcb max(1) 1. When mounted on 1 inch2 FR-4, 2 Oz copper board 50 °C/W |
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