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NCE6080AI Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE6080AI Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 8 page  Wuxi NCE Power Co., Ltd Page V3.0 1 NCE6080AI http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● PWM ● Load Switching 100% UIS TESTED! 100% ΔVds TESTED! Schematic diagram Marking and pin assignment TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE6080AI NCE6080AI TO-251-3L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 80 A Drain Current-Continuous(TC=100℃) ID (100℃) 56.5 A Pulsed Drain Current IDM 320 A Maximum Power Dissipation PD 110 W Derating factor 0.73 W/℃ Single pulse avalanche energy (Note 5) EAS 390 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.36 ℃ /W |
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