BLW77 datasheet(4/17 Pages) PHILIPS

4 / 17 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW77

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Notes

1. Measured under pulse conditions: tp ≤ 300 µs; δ≤ 0,02.

2. Measured under pulse conditions: tp ≤ 50 µs; δ≤ 0,01.

Collector-emitter breakdown voltage

VBE = 0; IC = 50 mA

V(BR) CES

70 V

Collector-emitter breakdown voltage

open base; IC = 100 mA

V(BR) CEO

35 V

Emitter-base breakdown voltage

open collector; IE = 20 mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE = 35 V

ICES

20 mA

D.C. current gain(1)

IC = 7 A; VCE =5 V

hFE

15 to 80

D.C. current gain ratio of matched devices(1)

IC = 7 A; VCE =5 V

hFE1/hFE2

1,2

Collector-emitter saturation voltage(1)

IC = 20 A; IB =4 A

VCEsat

typ.

2 V

Transition frequency at f = 100 MHz(2)

−IE = 7 A; VCB = 28 V

typ.

320 MHz

−I

E = 20 A; VCB = 28 V

typ.

300 MHz

Collector capacitance at f = 1 MHz

IE =Ie = 0; VCB = 28 V

typ.

255 pF

Feedback capacitance at f = 1 MHz

IC = 100 mA; VCE = 28 V

Cre

typ.

175 pF

Collector-ﬂange capacitance

Ccf

typ.

3 pF

Fig.4 Typical values; VCE = 20 V.

handbook, halfpage

1.5

0.5

10−1

10−2

MGP523

VBE (V)

(A)

Th = 70 °C

°C

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