August 1986

2

Philips Semiconductors

Product specification

HF power transistor

BLW97

DESCRIPTION

N-P-N silicon planar epitaxial

transistor designed for use in class-A,

AB and B operated high-power

industrial and military transmitting

equipment in the h.f. band.

The transistor offers excellent

performance as a linear amplifier in

s.s.b. applications. It is resistance

stabilized and is made to withstand

severe load-mismatch conditions. All

leads are isolated from the flange.

The transistors are supplied in

QUICK REFERENCE DATA

MODE OF OPERATION

V

A

f

MHz

W

dB

%

dB

dB

s.s.b.

(class-AB)

28

0,1

1,6

− 28

175 (PEP)

> 11,5

> 40

<−30

< −30

PIN CONFIGURATION

Fig.1 Simplified outline. SOT121B.

handbook, halfpage

MLA876

43

2

1

PINNING - SOT121B.

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.