C6D08065G

2

Rev. 0, JULY 2021

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

Electrical Characteristics

Parameter

Symbol Typ.

Max.

Units Test Conditions

Note

Drain-Source Voltage

V

F

1.27

1.40

V

I

F = 8 A, TJ = 25 °C

Fig. 1

1.37

1.50

I

F = 8 A, TJ = 175 °C

Reverse Current

I

R

2

20

µA

V

R = 650 V, TJ = 25 °C

Fig. 2

15

200

V

R = 650 V, TJ = 175 °C

Total Capacitive Charge

Q

C

29

nC

V

R = 400 V, TJ = 25 °C

Fig. 5

Total Capacitance

C

518

pF

V

R = 0 V, TJ = 25 °C, f = 1 MHz

Fig. 6

56

V

R = 200 V, TJ = 25 °C, f = 1 MHz

45

V

R = 400 V, TJ = 25 °C, f = 1 MHz

Capacitance Stored Energy

E

C

4.4

µJ

V

R = 400 V

Fig. 7

Note:

SiC Schottky Diodes are majority carrier devices, so there is no reverse recovery charge.

Thermal & Mechanical Characteristics

Parameter

Symbol

Typ.

Units

Note

Thermal Resistance, Junction to Case

R

θ, JC

1.62

°C / W

Operating Junction & Storage Temperature

T

J , Tstg

-55 to +175

°C

Fig. 9