C6D10065E datasheet(1/6 Pages) WOLFSPEED

Part #	C6D10065E

Description	Silicon Carbide Schottky Diode Z-Rec® Rectifier

PDF	6 Pages

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Manufacturer	WOLFSPEED [WOLFSPEED, INC.]

Direct Link	https://www.wolfspeed.com/

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C6D10065E Rev. A, 05-2020

C6D10065E

Silicon Carbide Schottky Diode

Z-Rec® Rectifier

Features

• New 6th Generation Technology

• Low Forward Voltage Drop (V

F)

• Zero Reverse Recovery Current

• Zero Forward Recovery Voltage

• Low Leakage Current (I

r)

• Temperature-Independent Switching Behavior

• Positive Temperature Coefficient on V

F

Benefits

• Higher System Level Efficiency

• Increase System Power Density

• Reduction of Heat Sink Requirements

• Parallel Devices Without Thermal Runaway

Applications

• Switch Mode Power Supplies (SMPS)

• Server/Telecom Power Supplies

• Industrial Power Supplies

• Solar

• UPS

Package

TO-252-2

Maximum Ratings (T

C = 25˚C unless otherwise specified)

Symbol

Parameter

Value Unit

Test Conditions

Note

V

RRM

Repetitive Peak Reverse Voltage

650

V

DC

DC Blocking Voltage

650

V

I

F

Continuous Forward Current

35

18

10

A

T

C=25˚C

T

C=125˚C

T

C=155˚C

Fig. 3

I

FRM

Repetitive Peak Forward Surge Current

41

24

A

T

C=25˚C, tP = 10 ms, Half Sine Wave

T

C=110˚C, tP = 10 ms, Half Sine Wave

I

FSM

Non-Repetitive Peak Forward Surge Current

78

68

A

T

C=25˚C, tP = 10 ms, Half Sine Wave

T

C=110˚C, tP = 10 ms, Half Sine Wave

Fig. 8

I

F,Max

Non-Repetitive Peak Forward Surge Current

1100

1000

A

T

C=25˚C, tP = 10 µs, Pulse

T

C=110˚C, tP = 10 µs, Pulse

Fig. 8

P

tot

Power Dissipation

99

43

W

T

C=25˚C

T

C=110˚C

Fig. 4

T

J , Tstg

Operating Junction and Storage Temperature

-55 to

+175

˚C

Part Number

Package

Marking

C6D10065E

TO-252-2

C6D10065

V

RRM

=

650 V

I

F (TC=155˚C) =

10 A

Q

c

=

34 nC

PIN 1

PIN 2

CASE

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