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4

Rev. 2, 2022-02-25

CAS480M12HM3

4600 Silicon Dr., Durham, NC 27703

Figure 2. Normalized On-State Resistance vs. Drain Current for Various

Junction Temperatures

Typical Performance

Figure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at

V

GS = 15 V

Figure 1. Output Characteristics for Various Junction

Temperatures

Figure 3. Normalized On-State Resistance vs.

Junction Temperature

Figure 4. Transfer Characteristic for Various Junction

Temperatures

Figure 6. 3rd Quadrant Characteristic vs. Junction Temperatures at

V

GS = 0V (Diode)

0

100

200

300

400

500

600

700

800

900

0

1

2

3

4

5

Drain-Source Voltage, VDS (V)

150 °C

125 °C

-40 °C

100 °C

tp < 300 μs

VGS = 15 V

25 °C

175 °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50

-25

0

25

50

75

100 125 150 175 200

Virtual Junction Temperature, TVJ (°C)

tp < 300 μs

VGS = 15 V

ID = 480 A

0

100

200

300

400

500

600

700

0

2

4

6

8

10

12

Gate-Source Voltage, VGS (V)

-25 °C

-40 °C

0 °C

25 °C

100 °C

125 °C

150 °C

175 °C

tp < 300 μs

VDS = 20 V

0

100

200

300

400

500

600

700

800

900

0

0.5

1

1.5

2

2.5

3

Source-Drain Voltage, VSD (V)

150 °C

125 °C

-40 °C

100 °C

tp < 300 μs

VGS = 15 V

25 °C

175 °C

0

100

200

300

400

500

600

700

800

900

0

0.5

1

1.5

2

2.5

3

3.5

4

Source-Drain Voltage, VSD (V)

150 °C

125 °C

-40 °C

100 °C

tp < 300 μs

VGS = 0 V

25 °C

0 °C

-25 °C

175 °C

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

100

200

300

400

500

600

700

800

900

Drain-Source Current, IDS (A)

tp < 300 μs

VGS = 15 V

25 °C

100 °C

125 °C

150 °C

175 °C

-40 °C