Rev. 04, 2023-07-07

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Thermally-Enhanced High Power RF LDMOS FET

1000 W, 50 V, 1030 / 1090 MHz

Description

The PTVA101K02EV LDMOS FET is designed for use in power amplifier

applications in the 1030 MHz / 1090 MHz frequency band. Features in-

clude high gain and thermally-enhanced package with bolt-down flange.

Manufactured with Wolfspeed's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

PTVA101K02EV

Package H-36275-4

Features

• Broadband input matching

• High gain and efficiency

• Integrated ESD protection

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

• Capable of withstanding a 10:1 load mismatch

(all phase angles) at 1000 W under MODE–S

pulse condition, (32µS ON / 18µS OFF) X 80,

LTDF = 6.4%.

RF Characteristics

Pulsed RF Performance (tested in Wolfspeed test fixture)

VDD = 50 V, IDQ = 0.15 A, POUT = 900 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

17

18

21

dB

Drain Efficiency

hD

62

65

—

%

0

10

20

30

40

50

60

2

6

10

14

18

22

26

30

35

40

45

50

55

60

65

Pout (dBm)

Power Sweep, Pulsed RF

VDD = 50 V, IDQ = 150 mA, TCASE = 25°C

ƒ = 1030 MHz

128µs, 10%

128µs, 1%

MODE-S

a101k02ev_1-1

Gain

Efficiency

PTVA101K02EV