4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 02.1, 2021-07-13

All published data at TAMBIENT = 25°C unless otherwise indicated

WSGPA01

Package PG-DFN-3x4-1

10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

Features

• GaN on SiC HEMT technology

• Operating frequency : up to 5 GHz

• P3dB : up to 10 W

• Supply voltage : up to 50 V

• Maximum junction temperature : 225 °C

• Pb-free and RoHS compliant

WSGPA01

Description

The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from

supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communi-

cations infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals, it may be suitable for other

applications at frequencies up to 5 GHz, restricted only by its maximum operating conditions.

RF Performance

Typical Single-carrier WCDMA Performance (tested in Wolfspeed test fixture)

VDD = 48 V, IDQ = 25 mA, POUT = 26.5 dBm, channel bandwidth = 3.84 MHz, input PAR = 10 dB @ 0.01% CCDF

Frequency

POUT

(dBM)

Gain

(dB)

Efficiency

(%)

ACPR –

(dBc)

ACPR +

(dBc)

PAR

(dB)

3400 MHz

26.5

16.1

16.9

–47.8

–48.6

9.3

3600 MHz

26.5

16.0

15.7

–49.1

–49.9

9.4

3800 MHz

26.5

15.7

16.5

–46.9

–47.2

9.3