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IRLL014 Datasheet(PDF) 2 Page - International Rectifier |
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IRLL014 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLL014 2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 10A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: VDD=25V, starting T J = 25°C, L =16 mH RG = 25Ω, IAS = 2.7A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 2.7A, VGS = 0V trr Reverse Recovery Time ––– 65 130 ns TJ = 25°C, IF = 10A Qrr Reverse RecoveryCharge ––– 0.33 0.65 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– ––– ––– 22 2.7 A Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.073 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.20 VGS = 5.0V, ID = 1.6A ––– ––– 0.28 Ω VGS = 4.0V, ID = 1.4A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 3.2 ––– ––– S VDS = 25V, ID = 1.6 A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 10V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V Qg Total Gate Charge ––– ––– 8.4 ID = 10A Qgs Gate-to-Source Charge ––– ––– 3.5 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 6.0 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 9.3 ––– VDD = 30V tr Rise Time ––– 110 ––– ns ID = 10A td(off) Turn-Off Delay Time ––– 17 ––– RG = 12 Ω tf Fall Time –– 26 ––– RD = 2.8 Ω, See Fig. 10 nH Ciss Input Capacitance ––– 400 ––– VGS = 0V Coss Output Capacitance ––– 170 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5 IGSS RDS(on) StaticDrain-to-SourceOn-Resistance IDSS Drain-to-Source Leakage Current S D G Between lead, 6mm(0.25in) from package and center of die contact. LS Internal Source Inductance Internal Drain Inductance LD ––– 4.0 ––– ––– 6.0 ––– |
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