BCP69 datasheet(1/3 Pages) DGNJDZ

Part #	BCP69

Description	SOT-223 Plastic-Encapsulate Transistors

PDF	3 Pages

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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BCP69

TRANSISTOR (PNP)

FEATURES



High Current and Low Voltage



NPN Complement:BCP68

APPLICATIONS



General Purpose Switching and Amplification



Power Applications Such as Audio Output Stages

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-0.1mA,IE=0

-32

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-0.1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-25V,IE=0

-100

nA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-100

nA

hFE(1)

VCE=-1V, IC=-0.5A

85

375

hFE(2)

VCE=-1V, IC=-1A

60

hFE(3)

VCE=-10V, IC=-5mA

50

DC current gain

hFE(4)

VCE=-1.8V, IC=-10mA

140

230

Collector-emitter saturation voltage

VCE(sat)

IC=-1A,IB=-100mA

-0.5

V

VBE(1)

VCE=-10V, IC=-5mA

-0.68

V

Base-emitter voltage

VBE(2)

VCE=-1V, IC=-1A

-1

V

Transition frequency

fT

VCE=-5V,IC=-10mA, f=100MHz

40

MHz

Collector output capacitance

Cob

VCB=-5V, IE=0, f=1MHz

48

pF

CLASSIFICATION OF hFE(1)

RANK

BCP69-16

BCP69-25

RANGE

100–250

160–375

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-32

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-1

A

PC

Collector Power Dissipation

1

W

RθJA

Thermal Resistance From Junction To Ambient

125

℃/W

Operation Junction and

Storage Temperature Range

Tj,Tstg

-55~+150

℃

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

SOT-223 Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,

1/3

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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