M58BW16F datasheet(39/81 Pages) STMICROELECTRONICS

39 / 81 page

M58BW16F, M58BW32F

Command interface

39/81

Table 11.

Read Electronic Signature

Code

Device

Amax-A0

DQ31-DQ0

Manufacturer

All

00000h

00000020h

Device

M58BW16FT

00001h

0000883Ah

M58BW16FB

00001h

00008839h

M58BW32FT

00001h

00008838h

M58BW32FB

00001h

00008837h

Burst Configuration

00005h

BCR(1)

BCR = Burst Configuration Register.

Block Protection

Configuration Register

All

SBA+02h(2)

SBA is the start address of each block.

00000000h (Unprotected)

00000001h (Protected)

Table 12.

Program, Erase times and endurance cycles(1)

TA = –40 to 125°C, VDD = 2.7V to 3.6V, VDDQ = 2.6V to VDD

Parameters

M58BWxxF

Unit

Min

Typ

Max

Full Chip Program

Double Word Program

µs

512 Kbit Block Erase

256 Kbit Block Erase

0.8

1.6

64 Kbit Block Erase

0.6

1.2

Program Suspend Latency Time

µs

Erase Suspend Latency Time

µs

Minimum effective erase time(2)

The minimum effective erase time is defined as the minimum time required between the last Erase

Resume command and the next Erase Suspend command for the internal Flash memory Program/Erase

Controller to be able to execute its algorithm.

µs

Program/Erase Cycles (per Block)

100,000

cycles

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