2N6547 datasheet(1/4 Pages) STMICROELECTRONICS

Part #	2N6547

Description	HIGH POWER NPN SILICON TRANSISTOR

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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2N6547

HIGH POWER NPN SILICON TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPE

s

NPN TRANSISTOR

s

HIGH VOLTAGE CAPABILITY

s

HIGH CURRENT CAPABILITY

s

FAST SWITCHING SPEED

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES

s

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The 2N6547 is a silicon Multiepitaxial Mesa NPN

transistor mounted in TO-3 metal case. It is

particulary intended for switching and industrial

applications from single and tree-phase mains.

INTERNAL SCHEMATIC DIAGRAM

October 2001

1

2

TO-3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCER

Collector-Emitter Voltage (RBE = 50

Ω)

850

V

VCES

Collector-Emitter Voltage (VBE = 0)

850

V

VCEO

Collector-Emitter Voltage (IB = 0)

400

V

VEBO

Emitter-Base Voltage (IC = 0)

9

V

IC

Collector Current

15

A

ICM

Collector Peak Current

30

A

IB

Base Current

4

A

IBM

Base Peak Current

20

A

Ptot

Total Dissipation at Tc = 25

oC

175

W

Tstg

Storage Temperature

-65 to200

oC

Tj

Max. Operating Junction Temperature

200

oC

®

1/4

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