BUJ303AX datasheet(3/7 Pages) PHILIPS

Part #	BUJ303AX

Description	Silicon Diffused Power Transistor

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 7 page

Philips Semiconductors

Preliminary specification

Silicon Diffused Power Transistor

BUJ303AX

Fig.1. Test circuit for V

CEOsust.

Fig.2. Oscilloscope display for V

CEOsust.

Fig.3. Test circuit resistive load. V

IM = -6 to +8 V

CC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

B and RL calculated from ICon and IBon requirements.

Fig.4. Switching times waveforms with resistive load.

Fig.5. Test circuit inductive load.

CC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

Fig.6. Switching times waveforms with inductive load.

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

30-60 Hz

300R

10 %

90 %

ton

toff

IBon

-IBoff

ICon

30ns

VCE / V

min

VCEOsust

IC / mA

100

200

250

IBon

-VBB

T.U.T.

VCC

T.U.T.

VIM

ICon

IBon

-IBoff

toff

10 %

90 %

August 1998

Rev 1.000

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