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AS4CM4EOQ Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

Part # AS4CM4EOQ
Description  4M X 4 CMOS Quad CAS DRAM (EDO) family
PDF  16 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4CM4EOQ Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation

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AS4C4M4EOQ
AS4C4M4E1Q
®
3/22/01; v.1.0
Alliance Semiconductor
P. 6 of 16
AC parameters common to all waveforms
Read cycle
Symbol Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRC
Random read or write cycle time
80
–
100
–
ns
tRP
RAS precharge time
30
–
40
–
ns
tRAS
RAS pulse width
50
10K
60
10K
ns
tCAS
CAS pulse width
8
10K
10
10K
ns
tRCD
RAS to CAS delay time
15
35
15
43
ns
6
tRAD
RAS to column address delay time
12
25
12
30
ns
7
tRSH
CAS to RAS hold time
10
–
10
–
ns
tCSH
RAS to CAS hold time
40
–
50
–
ns
tCRP
CAS to RAS precharge time
5
–
5
–
ns
tASR
Row address setup time
0
–
0
–
ns
tRAH
Row address hold time
8
–
10
–
ns
tT
Transition time (rise and fall)
1
50
1
50
ns
4,5
tREF
Refresh period
–
32/64
–
32/64
ms
17/16
tCP
CAS precharge time
8
–
10
–
ns
tRAL
Column address to RAS lead time
25
–
30
–
ns
tASC
Column address setup time
0
–
0
–
ns
tCAH
Column address hold time
8
10
–
ns
Symbol Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRAC
Access time from RAS
–50
–
60
ns
6
tCAC
Access time from CAS
–
12
–
15
ns
6,13
tAA
Access time from address
–
25
–
30
ns
7,13
tRCS
Read command setup time
0
–
0
–
ns
tRCH
Read command hold time to CAS
0–
0–
ns
9
tRRH
Read command hold time to RAS
0–
0–
ns
9



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