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DB201S Datasheet(PDF) 2 Page - SMC Diode Solutions Co. LTD |
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DB201S Datasheet(HTML) 2 Page - SMC Diode Solutions Co. LTD |
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2 / 5 page ![]() Technical Data Data Sheet N1941, Rev. - China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com DB201S THRU DB207S Characteristic Symbol DB 201S DB 202S DB 203S DB 204S DB 205S DB 206S DB 207S Unit Maximum Forward Voltage Drop per Bridge Element @IF =2.0A, TA=25°C VF 1.1 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IR 5 500 μA Typical Junction Capacitance (Note 2) CJ 25 pF * Pulse width < 300 µs, duty cycle < 2% Characteristic Symbol DB 201S DB 202S DB 203S DB 204S DB 205S DB 206S DB 207S Unit Typical Thermal Resistance Junction to Ambient RθJA 40 °C/W Typical Thermal Resistance Junction to Lead RθJL 15 °C/W Operating Junction and Storage Temperature Range TJ ,TSTG -55+150 °C Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad. 2. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC Electrical Characteristics: Thermal-Mechanical Specifications: Ratings and Characteristics Curves |
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