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BCP56-16 Datasheet(PDF) 4 Page - STMicroelectronics

Part # BCP56-16
Description  Low power NPN Transistor
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BCP56-16 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
BCP56-16
4/9
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (2) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = 30V
VCB = 30V;
Tj = 125°C
100
10
nA
µA
V(BR)CEO (2)
Collector-emitter
breakdown voltage
(IB =0)
IC = 20mA
80
V
V(BR)CBO
Collector-base
breakdown voltage
(IE =0)
IC = 100µA
100
V
V(BR)EBO
Emitter-base breakdown
voltage (IC =0)
IE = 10µA
5V
VCE(sat) (2)
Collector-emitter
saturation voltage
IC = 500mA
IB = 50mA
0.5
V
VBE(on) (2) Base-emitter on voltage
IC = 500mA
VCE = 2V
1V
hFE (2)
DC current gain
IC = 5mA
VCE = 2V
IC = 150mA
VCE = 2V
IC = 500mA
VCE = 2V
40
100
25
250



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