BUL705 datasheet(4/11 Pages) STMICROELECTRONICS

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Electrical characteristics

BUL705

4/11

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (1) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE =-1.5V)

VCE =700V

Tj =125°C

100

500

µA

ICEO

Collector cut-off current

(IB =0)

VCE =400V

250

µA

VEBO

Emitter-base voltage

(IC = 0)

IE =10mA

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

IC =100mA

L =25mH

400

VCE(sat) (1) Collector-emitter

saturation voltage

IC =2A

IB =0.4A

IC =3A

IB =0.6A

IC =4A

IB =1A

0.4

0.6

0.8

VBE(sat) (1)

Base-emitter saturation

voltage

IC =2A

IB =0.4A

IC =3A

IB =0.6A

1.1

1.2

hFE

DC current gain

IC =10mA

VCE =5V

IC =2A

VCE =5V

Resistive load

Storage time

VCC =250V

IC =2A

IB1 = -IB2 =0.4A

(see fig.12 )

2.4

3.5

µs

Inductive load

Storage time

Fall time

IC =2A

IB1 =0.4A

VBE(off) =-5V

RBB =0Ω

Vclamp=250V

L =200

µH

(see fig.13)

0.7

1.4

100

µs

Inductive load

Storage time

Fall time

IC =2A

IB1 =0.4A

VBE(off) =-5V

RBB =0Ω

Vclamp=250V

L =200

µH

Tj =125°C

(see fig.13)

µs

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