BUV98AV datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

THERMAL DATA

Rthj-case

Rthc-h

Thermal Resistance Junction-case

Max

Thermal Resistance Case-heatsink With Conductive

Grease Applied

Max

0.83

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collector Cut-off

Current (RBE = 5

Ω)

VCE = VCEV

Tj = 100

ICEV

Collector Cut-off

Current (VBE = -5V)

VCE = VCEV

Tj = 100

0.4

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 0.2 A

L = 25 mH

Vclamp = 450 V

450

hFE

∗

DC Current Gain

IC = 24 A

VCE = 5 V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 16 A

IB = 3.2 A

IC = 24 A

IB = 5 A

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 16 A

IB = 3.2 A

1.6

diC/dt

Rate of Rise of

On-state Collector

VCC = 300 V

RC = 0

tp = 3

µs

IB1 = 6 A

Tj = 100

100

µs

VCE(3

µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 15

Ω

IB1 = 6 A

Tj = 100

o C

VCE(5

µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 15

Ω

IB1 = 6 A

Tj = 100

o C

Storage Time

Fall Time

IC = 16 A

VCC = 50 V

VBB = -5 V

LB = 1.5

µH

Vclamp = 300 V IB1 = 3.2 A

L = 750

µH

Tj = 100

0.4

µs

VCEW

Maximum Collector

Emitter Voltage

Without Snubber

ICWoff = 30 A

IB1 = 6 A

VBB = -5 V

VCC = 50 V

L = 750

µH

LB = 15

µH

Tj = 125

350

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUV98AV

2/7

BUV98AV Datasheet(PDF) 2 Page - STMicroelectronics

BUV98AV Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL