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D44H8 Datasheet(PDF) 2 Page - STMicroelectronics |
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D44H8 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.5 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = rated VCEO 10 µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5V 100 µA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage IC = 100 mA for D44H8 for D44H11 60 80 V V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 8 A IB = 0.4 A 1 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 8 A IB = 0.8 A 1.5 V hFE ∗ DC Current Gain IC = 2 A VCE = 1 V IC = 4 A VCE = 1 V 60 40 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % Safe Operating Area Derating Curves D44H8/D44H11 2/5 |
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