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ADA4937-1YCPZ-R7 Datasheet(PDF) 7 Page - Analog Devices |
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ADA4937-1YCPZ-R7 Datasheet(HTML) 7 Page - Analog Devices |
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7 / 9 page ![]() Preliminary Technical Data ADA4937-1 Rev. PrA | Page 7 of 9 ABSOLUTE MAXIMUM RATINGS The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive. The quiescent power is the voltage between the supply pins (V Table 3. Parameter Rating Supply Voltage TBD S ) times the quiescent current (I Power Dissipation See Figure 2 S ). The power dissipated due to the load drive depends upon the particular application. The power due to load drive is calculated by multiplying the load current by the associated voltage drop across the device. RMS voltages and currents must be used in these calculations. Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +105°C Lead Temperature (Soldering, 10 sec) 300°C Junction Temperature 150°C Airflow increases heat dissipation, effectively reducing θ Stresses above those listed under Absolute Maximum Rating may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. JA . In addition, more metal directly in contact with the package leads/exposed pad from metal traces, through-holes, ground, and power planes reduces the θ . JA Figure 2 shows the maximum safe power dissipation in the package vs. the ambient temperature for the 16-lead LFCSP (TBD °C/W) on a JEDEC standard 4-layer board. THERMAL RESISTANCE θ is specified for the worst-case conditions; that is, θ JA JA is specified for a device (including exposed pad) soldered to the circuit board. Table 4. Thermal Resistance Package Type θ Unit JA 16-Lead LFCSP (Exposed Pad) TBD °C/W Maximum Power Dissipation The maximum safe power dissipation in the ADA4937-1 package is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the ADA4937-1. Exceeding a junction temperature of 150°C for an extended period can result in changes in the silicon devices, potentially causing failure. Figure 2. Maximum Power Dissipation vs. Temperature for a 4-Layer Board ESD CAUTION |
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