MJE802 datasheet(2/4 Pages) STMICROELECTRONICS

Part #	MJE802

Description	SILICON NPN POWER DARLINGTON TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

2 / 4 page

THERMAL DATA

Rthj-amb

Thermal Resistance Junction-ambient

Max

3.13

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = rated VCBO

Tcase = 100

100

500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = rated VCEO

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

2mA

VCEO(sus)

∗

Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 50 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 4 A

IB = 40 mA

IC = 1.5 A

IB = 30 mA

2.5

VBE

∗

Base-Emitter Voltage

IC = 4 A

VCE = 3 V

IC = 1.5 A

VCE = 3 V

2.5

hFE

∗

DC Current Gain

IC = 4 A

VCE = 3 V

IC = 1.5 A

VCE = 3 V

100

750

hfe

Small Signal Current

Gain

IC = 1.5 A

VCE = 3 V

f = 1 MHz

* Pulsed: Pulse duration = 300

µs, duty cycle ≤ 1.5%

Safe Operating Area

MJE802

2/4

MJE802 Datasheet(PDF) 2 Page - STMicroelectronics

MJE802 Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4

Datasheet Download

Link URL