D40NF3LL datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STD40NF3LL

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS =0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max rating

VDS = max rating,

TC = 125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±16V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 20A

VGS = 4.5V, ID = 10A

0.0090

0.0115

0.0110

0.0135

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward

transconductance

VDS = 15V, ID =20A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

1650

540

130

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 15V, ID = 20A

RG =4.7Ω VGS =4.5V

(see Figure 13)

156

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15V, ID = 20A,

VGS = 4.5V, RG =4.7Ω

(see Figure 14)

8.5

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