STGP3NB60HDFP datasheet(2/12 Pages) STMICROELECTRONICS

2 / 12 page

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD

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ABSOLUTE MAXIMUM RATINGS

( ) Pulsewidth limitedby safeoperating area

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

(#) Calculated according to the iterative formula:

Symbol

Parameter

Value

Unit

STGP3NB60HD

STGB3NB60HD

STGP3NB60HDFP

VCES

Collector-Emitter Voltage (VGS =0)

600

VGE

Gate-Emitter Voltage

± 20

Collector Current (continuous) at TC = 25°C (#)

Collector Current (continuous) at TC = 100°C (#)

ICM ( )

Collector Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.4

0.2

W/°C

Tstg

Storage Temperature

–55 to 150

°C

Operating Junction Temperature

TO-220/D2PAK

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

2.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC = 250 µA, VGE = 0

600

ICES

Collector cut-off

(VGE =0)

VCE = Max Rating, TC =25 °C

µA

VCE = Max Rating, TC = 125 °C

100

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE =±20V,VCE = 0

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC = 250µA

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE =15V, IC =3 A

2.4

2.8

VGE =15V, IC = 3 A, Tj =125°C

1.9

C TC

()

JMAX

–

THJ

–

CESAT MAX

() TC IC

()

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