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UP1753L-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UP1753L-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() UP1753 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R220-020,A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 10 A Continuous Collector Current IC 6 A Power Dissipation at Ta =25℃ PD 3 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS Ta= 25℃ (unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100µA 200 300 V Collector-Emitter Breakdown Voltage BVCEO IC=10mA (Note1) 100 120 V Emitter-Base Breakdown Voltage BVEBO Ic=100µA 6 8 V Collector Cut-Off Current ICBO VCB=150V, Ta=25℃ VCB=150V Ta=100 ℃ 10 1 nA µA VCB=150V, Ta=25℃ 10 nA Collector Cut-Off Current ICER R≤1KΩ VCB=150V, Ta=100 ℃ 1 µA Emitter Cut-Off Current IEBO VEB=6V 10 nA Collector-Emitter Saturation Voltage VCE(SAT) IC=0.1A, IB=5mA (Note1) IC=2A, IB=100mA (Note1) IC=5A, IB=500mA (Note1) 50 150 330 mV mV mV Base-Emitter Saturation Voltage VBE(SAT) IC=5A, IB=500mA (Note1) 1250 mV Base-Emitter Turn-On Voltage VBE(ON) IC=5A, VCE =2V (Note1) 1100 mV IC=10mA, VCE =2V 100 200 IC=2A, VCE =2V (Note1) 100 200 300 IC=4A, VCE =2V (Note1) 50 100 Static Forward Current Transfer Ratio hFE IC=10A, VCE =2V (Note1) 20 Transition Frequency fT IC=100mA, VCE =10V f=50MHz 100 MHz Output Capacitance Cob VCB=10V, f=1MHz 38 pF tON 50 ns Switching Times tOFF IC=1A, VCC =10V IB1=IB2=100mA 1600 ns Note: 1.Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%, |
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