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2SC5264LS Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5264LS Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Silicon NPN Power Transistor 2SC5264LS www.iscsemi.com 2023-8-17 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 450V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 1.0V(Max) @IC=2.5A ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICP Collector Current (Pulse) 10 A PC Collector Power Dissipation 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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