MW4IC915MBR1 datasheet(3/20 Pages) FREESCALE

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MW4IC915MBR1 MW4IC915GMBR1

RF Device Data

Freescale Semiconductor

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued )

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz<Frequency>960 MHz

Quiescent Current Accuracy over Temperature

with 1.8 kΩ Gate Feed Resistors (-10 to 85°C) (1)

ΔIQT

—

±5

—

Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW

—

0.2

—

Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW

—

±0.6

—

Delay @ Pout = 3 W CW Including Output Matching

Delay

—

2.5

—

Part-to-Part Phase Variation @ Pout = 3 W CW

ΔΦ

—

±15

—

Typical GSM/GSM EDGE Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA,

869 MHz<Frequency<960 MHz

Output Power, 1dB Compression Point

P1dB

—

Watts

Power Gain @ Pout = 15 W CW

Gps

—

Power Added Efficiency @ Pout = 15 W CW

PAE

—

Input Return Loss @ Pout = 15 W CW

IRL

—

-15

—

Error Vector Magnitude @ Pout = 3 W Avg. including

0.6% rms source EVM

EVM

—

1.5

—

% rms

Spectral Regrowth at 400 kHz Offset @ Pout = 3 W Avg.

SR1

—

-65

—

dBc

Spectral Regrowth at 600 kHz Offset @ Pout = 3 W Avg.

SR2

—

-83

—

dBc

1. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1977.

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