MMBTA13 datasheet(1/3 Pages) UTC

Part #	MMBTA13

Description	DARLINGTON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR

PDF	3 Pages

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC MMBTA13

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R206-006,B

DARLINGTON TRANSISTOR

DESCRIPTION

The UTC MMBTA13 is a Darlington transistor.

FEATURES

*Collector-Emitter Voltage: VCES = 30V

*Collector Dissipation: Pc (mas) = 350 mW

MARKING

SOT-23

1

2

3

1: EMITTER 2: BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCES

30

V

Emitter-Base Voltage

VEBO

10

V

Collector Dissipation

Pc

350

mW

Collector Current

Ic

500

mA

Junction Temperature

Tj

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN MAX

UNIT

Collector-Emitter Breakdown Voltage

BVCES

Ic=100

µA,IB=0

30

V

Collector Cut-Off Current

ICBO

VCB=30V,IE=0

100

nA

Emitter Cut-Off Current

IEBO

VEB=10V,Ic=0

100

nA

DC Current Gain

hFE

VCE=5V,Ic=100mA

10000

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=100mA,IB=0.1mA

1.5

V

Base-Emitter on Voltage

VBE(on)

VCE=5V,Ic=100mA

2.0

V

Current Gain Bandwidth Product

fT

VCE=5V,Ic=10mA,

f=100MHz

125

MHz

Pulse test: Pulse Width<300

µs, Duty Cycle=2%

1M

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