P1856-AA3-R datasheet(2/3 Pages) UTC

2 / 3 page

UP1856

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R207-014,B

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-220

Collector-Emitter Voltage

VCEO

-200

Emitter-Base Voltage

VEBO

-6

Peak Pulse Current

IC(PEAK)

-5

Continuous Collector Current

-2

Power Dissipation at Ta=25°C

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Breakdown Voltage

BVCEO

IC= -10mA, IB=0 (Note)

-200

-240

Collector-Base Breakdown Voltage

BVCBO

IC= -0.1mA, IE=0

-220

-300

Emitter-Base Breakdown Voltage

BVEBO

IE= -0.1mA, IC=0

-6

-8

IC= -100mA, IB= -10mA

-30

-50

IC= -1A, IB= -100mA

-120

-165

Collector-Emitter Saturation Voltage(Note)

VCE(SAT)

IC= -2A, IB=-400mA

-168

-275

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-2A, IB=-400mA

-970

-1110

Base-Emitter Turn-On Voltage

VBE(ON)

IC=-2A, VCE=-5V (Note)

-810

-950

Collector Cut-Off Current

ICBO

VCB=-200V, IE=0

-50

Emitter Cut-Off Current

IEBO

VEB=-6V, IC=0

-10

hFE1

IC=-10mA, VCE=-5V

100

200

300

hFE2

IC=-1A, VCE=-5V

100

200

hFE3

IC=-2A, VCE=-5V

150

DC Current Gain (Note)

hFE4

IC=-5A, VCE=-5V

Transition Frequency

IC=-100mA, VCE=-10V

f=50MHz

110

MHz

Output Capacitance

Cob

VCB=-20V, f=1MHz

Turn-on Time

tON

Turn-off Time

tOFF

IC=-1A, IB1=-100mA

IB2=100mA, VCC=-50V

1140

Note: Pulsed test: duty cycle ≤ 2%, tP =300µsec.

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