2SA2016-AB3-R datasheet(2/6 Pages) UTC

2 / 6 page

2SA2016

PNP PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R208-018.B

ABSOLUTE MAXIMUM RATINGS (Ta=25°С)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-6

Collector Dissipation Mounted on a ceramic board

(250mm

2*0.8mm)

1.3

Collector Dissipation (Tc=25

°C)

3.5

Collector Current

-7

Collector Current

Icp

-10

Base Current

-1.2

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 to +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Tc=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-to-Base Breakdown Voltage

BVCBO

Ic= -10µA, IE=0

-50

Collector-to- Emitter Breakdown Voltage

BVCEO

Ic= -1mA, RBE=∞

-50

Emitter-to-Base Breakdown Voltage

BVEBO

Ic=0, IE= -10µA

-6

Collector Cut-Off Current

ICBO

VCB= -40V, IE=0

-0.1

µA

Emitter Cut-Off Current

IEBO

VEB= -4V, Ic=0

-0.1

µA

DC Current Gain

hFE

VCE= -2V, Ic= -500mA

200

560

Ic= -3.5A, IB= -175mA

-0.23 -0.39

Collector-Emitter Saturation Voltage

VCE(SAT)

Ic= -2A, IB= -40mA

-0.24 -0.40

Base-Emitter Saturation Voltage

VBE(SAT)

Ic= -2A, IB= -40mA

-0.83 -1.2

Gain Bandwidth Product

VCE= -10V, Ic= -500mA

290

MHz

Output Capacitance

Cob

VCB= -10V, f=1MHz

Turn-on Time

tON

See specified Test Circuit

Storage Time

tSTG

See specified Test Circuit

225

Fall Time

See specified Test Circuit

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