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2SD882SS-X-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SD882SS-X-AE3-R
Description  MEDIUM POWER LOW VOLTAGE TRANSISTOR
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD882SS-X-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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2SD882SS
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-018,B
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
DC
IC
3
A
Collector Current
Pulse
ICP
7
A
Base Current
IB
0.6
A
Ta=25℃
1
W
Collector Dissipation
TC=25℃
PC
10
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100µA, IE=0
40
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA, IB=0
30
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100µA, IC=0
5
V
Collector Cut-off Current
ICBO
VCB=30V, IE=0
1000
nA
Emitter Cut-off Current
IEBO
VEB=3V, IC=0
1000
nA
hFE1
VCE=2V, IC=20mA
30
200
DC Current Gain (Note 1)
hFE2
VCE=2V, IC=1A
100
150
400
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=2A, IB=0.2A
0.3
0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=2A, IB=0.2A
1.0
2.0
V
Current Gain Bandwidth Product
fT
VCE=5V, IC=0.1A
80
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
45
pF
Note 1: Pulse test: PW<300
µs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100-200
160-320
200-400



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