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BUT11AF Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUT11AF Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 8 page ![]() Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF Fig.11. Typical base-emitter and collector-emitter saturation voltages. V BEsat = f(IC); VCEsat = f(IC); IC/IB = 5 Fig.12. Collector-emitter saturation voltage. Solid lines = typ values, dotted lines = max values. V CEsat = f(IB); parameter IC August 1997 5 Rev 1.000 |
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