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MMBT1616AL-Y-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # MMBT1616AL-Y-AE3-R
Description  NPN EPITAXIAL SILICON TRANSISTOR
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMBT1616AL-Y-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

  MMBT1616AL-Y-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBT1616AL-Y-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBT1616AL-Y-AE3-R Datasheet HTML 3Page - Unisonic Technologies MMBT1616AL-Y-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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MMBT1616/A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-036.B
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
1616
60
V
Collector-Base Voltage
1616A
VCBO
120
V
1616
50
V
Collector-Emitter Voltage
1616A
VCEO
60
V
Emitter to Base Voltage
VEBO
6
V
DC
IC
1
A
Collector Current
Pulse*
IC
2
A
Total Power Dissipation (Ta=25℃)
PC
350
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note (*) Pulse width
≤10ms, Duty cycle<50%
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
ICBO
VCB=60V
100
nA
Emitter Cut-Off Current
IEBO
VEB= 6V
100
nA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1A, IB=50mA
0.15
0.3
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=1A, IB=50mA
0.9
1.2
V
Base Emitter On Voltage
VBE(ON)
VCE=2V, IC=50mA
600
640
700
mV
135
600
hFE1
VCE=2V, IC=100mA
135
400
DC Current Gain
hFE2
VCE=2V, IC=1A
81
Current Gain Bandwidth Product
fT
VCE=2V, IC=100mA
100
160
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
19
pF
Turn On Time
tON
VCE=10V, IC=100mA
0.07
us
Storage Time
tS
IB1=-IB2=10mA
0.95
us
Fall Time
tF
VBE(OFF)=-2 ~ -3V
0.07
us
CLASSIFICATION OF hFE1
RANK
Y
G
L
hFE1
135-270
200-400
300-600



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