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MMBT1616AL-L-AE3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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MMBT1616AL-L-AE3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() MMBT1616/A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R206-036.B TYPICAL CHARACTERISTICS 1000 110 100 300 Collector Output Capacitance Collector-Base Voltage, VCB (V) 500 300 100 50 30 10 5 3 3 5 30 50 IE=0 f=1.0MHz 1000 0.01 0.1 5 Current Gain-Bandwidth Product Collector Current, IC (A) 500 300 100 50 30 10 5 3 0.03 0.3 1 1 10 3 VCE=2V 10 0.001 0.01 0.5 Switching Time Collector Current, IC (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.003 0.03 0.1 0.01 1 0.3 VCC=10V IC=10·IB1=-10·IB2 tStG tON tF 0.05 100 04 10 80 60 40 20 2 6 8 Static Characteristic Collector-Emitter Voltage, VCE (V) IB=50µA IB=100µA IB=150µA IB=200µA IB=250µA IB=300µA 1.0 00.4 1.0 0.8 0.6 0.4 0.3 0.2 0.6 0.8 Static Characteristic Collector-Emitter Voltage, VCE (V) IB=5.0mA IB=4.5mA IB=3.5mA IB=3.0mA IB=2.5mA IB=2.0mA IB=1.5mA IB=1.0mA IB=0. 5mA 1000 0.01 0.05 5 DC Current Gain Collector Current, IC (A) 500 300 100 50 30 10 5 3 0.03 0.3 1 1 10 3 VCE=2V 0.5 0.1 |
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