| Electronic Components Datasheet Search |
|
MMBT5551-A-AE3-B-R Datasheet(PDF) 3 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
MMBT5551-A-AE3-B-R Datasheet(HTML) 3 Page - Unisonic Technologies |
|
3 / 4 page ![]() MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R206-010,D ■ TYPICAL CHARACTERICS Fig.2 DC Current Gain Collector Current, Ic (mA) 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 VCE=5V Fig.3 Base-Emitter on Voltage 10 0 10 1 10 2 Base-Emitter Voltage (V) 0 0.2 0.4 0.6 0.8 1.0 VCE=5V Collector Current, Ic (mA) 10 3 10 2 10 1 10 0 10 -1 Fig.4 Saturation Voltage Fig.5 Current Gain -Bandwidth Product Fig.1 Collector Output Capacitance VCE(SAT ) VBE(SAT) Ic=10*IB Collector Current, Ic (mA) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 VCE=10V Collector-Base Voltage (V) 10 3 10 0 10 1 10 2 0 2 4 6 8 10 f=1MHz IE=0 10 3 10 1 10 0 10 -1 10 -2 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |