STS9NH3LL datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STS9NH3LL

Description	N-channel 30V - 0.018ohm - 9A - SO-8 Low gate charge STripFET TM III Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

4 / 12 page

Electrical characteristics

STS9NH3LL

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating

VDS = Max rating @ 125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 4.5A

VGS= 4.5V, ID= 4.5A

0.018

0.020

0.022

0.025

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =10V, ID = 4.5A

8.5

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1MHz, VGS=0

857

147

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 15V, ID = 9A

VGS = 4.5V,

(see Figure 14)

7.0

2.5

2.3

STS9NH3LL Datasheet(PDF) 4 Page - STMicroelectronics

STS9NH3LL Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL