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ISF1017 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISF1017 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 7 page ![]() ISF1017 SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)= 38mΩ@VGS=20V Tj=25℃ · Low Capacitance · Avalanche Ruggedness APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · High Voltage DC-DC Converters · Battery Chargers Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage -5/﹢20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse 320 A PD Total Dissipation @TC=25℃ 260 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.48 ℃ /W |
Similar Part No. - ISF1017 |
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Similar Description - ISF1017 |
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