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ISCF8009 Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited

Part # ISCF8009
Description  SiC N-Channel MOSFET
PDF  8 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8009 Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited

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ISCF8009
eq C3M0032120K
SiC N-Channel MOSFET
www.iscsemi.com
3
td(on)
Turn-on Delay Time
VGS= - 4to +15V
ID= 30A,
VDS=800V,
Rg=2.5Ω,
inductive load
--
44
--
ns
tr
Turn-on Rise Time
--
120
--
td(off)
Turn-off Delay Time
--
125
--
tf
Turn-off Fall Time
--
140
--
EON
Turn-On Switching Energy
(SiC Diode FWD)
VGS= - 4to +15V
ID= 40A,
VDS=800V,
Rg=2.5Ω
--
367
--
uJ
EOFF
Turn Off Switching Energy
(SiC Diode FWD)
--
123
--
EON
Turn-On Switching Energy
(Body Diode FWD)
VGS= - 4to +15V
ID= 40A,
VDS=800V,
Rg=2.5Ω
--
955
--
EOFF
Turn Off Switching Energy
(Body Diode FWD)
--
107
--
SOURCE-DRAIN BODY DIODE CHARACTERISTICS
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
ISD= 20A; VGS= -4V
--
4.6
--
V
VSD
Diode Forward Voltage
ISD= 20A; VGS= -4V;TJ=175℃
--
4.2
--
V
IS
Diode pulse Current
VGS= -4V
--
--
62
A
trr
Reverse Recovery Time
VGS = -4 V, ISD = 40 A,
VR = 800V
dif/dt=2250 A/µs
TJ=175℃
--
27
--
ns
Qrr
Reverse Recovery Charge
--
478
--
uC
Irrm
Peak Reverse Recovery Current
--
27
--
A



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