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ISCF8008 Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited |
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ISCF8008 Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 7 page ![]() ISCF8008 eq C3M0065100K SiC N-Channel MOSFET www.iscsemi.com 3 td(on) Turn-on Delay Time VGS= - 4to +15V ID= 36A, VDS=800V, Rg=25Ω, inductive load -- 38 -- ns tr Turn-on Rise Time -- 86 -- td(off) Turn-off Delay Time -- 80 -- tf Turn-off Fall Time -- 100 -- SOURCE-DRAIN BODY DIODE CHARACTERISTICS Drain - Source Body Diode Characteristics VSD Diode Forward Voltage ISD= 10A; VGS= -4V -- 4.8 -- V VSD Diode Forward Voltage ISD= 10A; VGS= -4V;TJ=150℃ -- 4.4 -- V IS Diode pulse Current VGS= -4V -- -- 90 A trr Reverse Recovery Time VGS = -4 V, ISD = 20 A, VR = 700V dif/dt=4500 A/µs TJ=150℃ -- 14 -- ns Qrr Reverse Recovery Charge -- 310 -- uC Irrm Peak Reverse Recovery Current -- 34 -- A |
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