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ISCF8011 Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited

Part # ISCF8011
Description  SiC N-Channel MOSFET
PDF  8 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8011 Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited

  ISCF8011 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 5Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 6Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 7Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 8Page - Inchange Semiconductor Company Limited  
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ISCF8011
SiC N-Channel MOSFET
www.iscsemi.com
3
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
td(on)
Turn-on Delay Time
VGS= - 5to +20V
ID= 50A,
VDS=800V,
Rg=2.5Ω,
L=68uH
--
42
--
ns
tr
Turn-on Rise Time
--
34
--
td(off)
Turn-off Delay Time
--
71
--
tf
Turn-off Fall Time
--
13
--
EOn
Turn-on Energy
--
2.6
--
mJ
EOff
Turn-off Energy
--
0.73
--
SOURCE-DRAIN BODY DIODE CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VSD
Diode Forward Voltage
ISD= 37.5A; VGS= 0V
--
4.6
6
V
VSD
Diode Forward Voltage
ISD=37.5A; VGS= -5V
Tj=150℃
--
4.2
6
V
IS
Diode Continuous Current
VGS=0V , TC=25℃
--
110
--
A
trr
Reverse Recovery Time
VGS = -5 V, ISD = 50 A,
VR = 800V
dif/dt=-900 A/µs,
Tj=150℃
--
98
--
ns
Qrr
Reverse Recovery Charge
--
613
--
uC
Irrm
Peak Reverse Recovery Current
--
18
--
A



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