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PJ99 Datasheet(PDF) 1 Page - InterFET Corporation |
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PJ99 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 2 page  F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch Absolute maximum ratings at TA = 25¡C Gate Current, Ig 10 mA Operating Junction Temperature, Tj +150°C Storage Temperature, Ts – 65°C to +175°C Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 Datasheet IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P At 25°C free air temperature: PJ99 Process Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS 30 40 V IG = 1 µA, VDS = ØV Reverse Gate Leakage Current IGSS 0.5 1 nA VGS = 20V, VDS = ØV Drain Saturation Current (Pulsed) IDSS – 5 – 60 mA VDS = – 15V, VGS = ØV Gate Source Cutoff Voltage VGS(OFF) 18 V VDS = – 15V, ID = 1 nA Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 75 Ω ID = 1 mA, VGS = ØV f = 1 kHz Forward Transconductance gfs 15 mS VDS = – 15V, VGS = ØV f = 1 kHz Input Capacitance Ciss 18 pF VDS = 15V, VGS = ØV f = 1 MHz Feedback Capacitance Ciss 4.5 pF VDS = ØV, VGS = 10V f = 1 MHz Equivalent Noise Voltage ¯eN 8 nV/ √HZ V DS = – 10 V, VGS = Ø V f = 1 kHz Turn On Delay Time td(on) 5ns Rise Time tr 10 ns VDD = – 10V, ID(ON) = – 15 mA Turn Off Delay Time td(off) 6ns RL = 580 Ω, VGS(ON) = ØV Fall Time tf 5ns VGS(OFF) = 12V 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com G G S-D S-D Die Size = 0.021" X 0.021" All Bond Pads = 0.004" Sq. Substrate is also Gate. Databook.fxp 1/13/99 2:09 PM Page F-30 |
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