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ISS5010 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISS5010 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISS5010 eq SK20100CD2 isc Schottky Barrier Rectifier www.iscsemi.com 1 FEATURES ·Multi-layer Metal -Silicon Potential Structure ·Low Leakage Current ·High Current Capability, High Efficiency ·High Junction Temperature Capability MECHANICAL CHARACTERISTICS ·Low Voltage High Frequency Switching Power Supply ·Low Voltage High Frequency Invers Circuit ·Low Voltage Continued Circuit and Protection Circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current 10 20 A IFSM Peak Forward Surge Current 50/60Hz Half Sine-Wave 50Hz（10ms） 110 125 A 60Hz（8.3ms） I2t Rating For Fusing-Grenzlastintegral 80 A2S TJ Junction Temperature -50~150 ℃ Tstg Storage Temperature Range -50~175 ℃ |
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