●Multilayer Metal -Silicon Potential Structure.

●Low Leakage Current.

●High Current Capability, High Efficiency.

●High Junction Temperature Capability.

●Low Voltage High Frequency Switching Power Supply.

●Low Voltage High Frequency Invers Circuit.

●Low Voltage Continued Circuit and Protection Circuit.

For use in ultra-low forward voltage drop to maximize efficiency in

Power Supply applications.

● Package: TO-247AB

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals : Tin plated leads, solderable per J-STD-

002 and JESD22-B102

● Polarity : As marked

PARAMETER

SYMBOL

UNIT

MBR3045PT

Device marking code

MBR3045PT

Repetitive peak reverse voltage

VRRM

V

45

Average Rectified Forward Current (Rated VR-20Khz

Square Wave) - 50% duty cycle, Tc (FIG 1)

IFAV

A

30

Surge(non-repetitive)forward current

(Rated Load 8.3 Half Mssine Wave-According to

JEDEC Method), Ta=25

IFSM

A

290

Storage temperature

TSTG

-40 ~+150

Junction temperature

TJ

-40 ~+150

PARAMETER

SYMBOL UNIT

TEST CONDITIONS

MBR3045PT

Maximum instantaneous forward

voltage drop per diode

VF

V

IF=15A

TJ=25

0.66

TJ=125

0.6

Maximum DC reverse current at

rated DC blocking voltage per diode

@ VRM=VRRM

IRRM

mA

TJ=25

0.05

TJ=125

15

PARAMETER

SYMBOL

UNIT

MBR3045PT

Typical Thermal Resistance(Per leg)

RθJ-C

/W

0.5

A K

A

Schottky Barrier Rectifiers

MBR3045PT

TO-247AB

12-05-2022

Page 1 of 3

RFE International • Tel (949) 833-1988 • Fax (949) 833-1788 • E-mail sales@rfeinc.com

FEATURES

TYPICAL APPLICATIONS

MECHANICAL DATA

MAXIMUM RATINGS (Ta=25 Unless otherwise specified

ELECTRICAL CHARACTERISTICS (Ta=25 Unless otherwise specified

THERMAL CHARACTERISTICS (Ta=25 Unless otherwise specified