MMBT4403 datasheet(1/3 Pages) UMW

Part #	MMBT4403

Description	SOT-23 Plastic-Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	UMW [Guangdong Youtai Semiconductor Co., Ltd.]

Direct Link	https://www.umw-ic.com/

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1 / 3 page

MMBT4403 TRANSISTOR (PNP)

FEATURES

Switching transistor

MARKING ：2T

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.6

A

PC

Collector Power Dissipation

0.3

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA , IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA , IB=0

-40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35V, IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-35 V, IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V, IC= -150mA

100

300

Collector-emitter saturation voltage

VCE(sat)

IC=-150mA, IB=-15mA

-0.4

V

Base-emitter saturation voltage

VBE(sat)

IC=- 150mA, IB=-15mA

-0.95

V

Transition frequency

f T

VCE= -10V, IC= -20mA

f = 100MHz

200

MHz

Detay time

td

15

ns

Rise time

tr

VCC=-30V,VEB=-2V,

IC=-150mA.IB1=-15mA

20

ns

Storage time

ts

225

ns

Fall time

tf

VCC=-30V, IC=-150mA.

IB1= IB2=-15mA

30

ns

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

SOT-23 Plastic-Encapsulate Transistors

UMW

R

UMW MMBT4403

1

www.umw-ic.com

友台半导体有限公司

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MMBT4403 Datasheet(PDF) 1 Page - Guangdong Youtai Semiconductor Co., Ltd.

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